Semiconductor device having a double deep well and method of manufacturing same

ABSTRACT

A method of forming a semiconductor device includes patterning a first mask over a substrate defining a first opening. The substrate includes a first dopant type. The method includes implanting ions having a second dopant type through the first opening to form a first deep well. The method includes patterning a second mask over the substrate defining a second opening. The method includes implanting ions having the second dopant type through the second opening to form a second deep well, wherein an energy for implanting ions to form the second deep well is lower than an energy for implanting ions to form the first deep well. The method includes implanting ions having the first dopant type into the substrate to form a first well, wherein the energy for implanting ions to form the second deep well is greater than an energy for implanting ions to form the first well.

PRIORITY CLAIM

The present application is a divisional of U.S. application Ser. No.13/913,921, filed Jun. 10, 2013, which is incorporated herein byreference in its entirety.

BACKGROUND

Transistors are used as switches to electrically couple or decouplesignals among different nodes. For example, in a mobile communicationsystem capable of transmitting and receiving signals at various carrierfrequency bands, an antenna is usually shared by various correspondingIntermediate Frequency (IF) and/or baseband circuits through one or moreRadio Frequency (RF) switches. The term “RF” refers to a radio wavehaving a frequency ranging from about 3 kHz to 300 GHz. When twotransistors sharing the same substrate are used as switches, anelectrical coupling path is formed between the two transistors throughthe substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

One or more embodiments are illustrated by way of example, and not bylimitation, in the figures of the accompanying drawings, whereinelements having the same reference numeral designations represent likeelements throughout. The drawings are not to scale, unless otherwisedisclosed.

FIG. 1A is a cross-sectional view of a P-type metal oxide semiconductor(PMOS) transistor device having a double deep well in accordance withone or more embodiments.

FIG. 1B is a cross-sectional view of an N-type metal oxide semiconductor(NMOS) transistor device having a double deep well in accordance withone or more embodiments.

FIG. 2 is a flow chart of a method of manufacturing a semiconductordevice in accordance with one or more embodiments.

FIGS. 3A-1 through 31-2 are cross-sectional views of a semiconductordevice at various stages during manufacture in accordance with one ormore embodiments.

FIG. 4 is a flow chart of a method of manufacturing a semiconductordevice in accordance with one or more embodiments.

FIGS. 5A-1 through 5C-2 are cross-sectional views of a semiconductordevice at various stages of manufacture in accordance with one or moreembodiments.

DETAILED DESCRIPTION

It is understood that the following disclosure provides one or moredifferent embodiments, or examples, for implementing different featuresof the disclosure. Specific examples of components and arrangements aredescribed below to simplify the present disclosure. These are, ofcourse, examples and are not intended to be limiting. In accordance withthe standard practice in the industry, various features in the drawingsare not drawn to scale and are used for illustration purposes only.

Moreover, spatially relative terms, for example, “lower,” “upper,”“horizontal,” “vertical,” “above,” “below,” “up,” “down,” “top,”“bottom,” “left,” “right,” etc. as well as derivatives thereof (e.g.,“horizontally,” “downwardly,” “upwardly,” etc.), are used for ease ofthe present disclosure of the relationship of features. The spatiallyrelative terms are intended to cover different orientations of thedevice including the features.

FIG. 1A is a cross sectional view of a p-type metal oxide semiconductor(PMOS) transistor 100A having a double deep well in accordance with oneor more embodiments. PMOS transistor 100A includes a substrate 110having an upper portion 110 a and a lower portion 110 b. Between theupper portion 110 a and lower portion 110 b in substrate 110 is a doubledeep well 120 having an n-type dopant concentration therein. A firstwell 132 including an n-type dopant type is in substrate 110 above upperportion 110 a. A second well 134 is in substrate 110 above upper portion110 a surrounding first well 132. Second well 134 has a p-type dopant. Agate structure 140 is formed over first well 132. A first heavily dopedregion 152 including a p-type dopant is in first well 132 surroundinggate structure 140. A second heavily doped region 154 including ann-type dopant is in first well 132 and surrounds first heavily dopedregion 152. Non-conductive structures 160 separate first heavily dopedregion 152 from second heavily doped region 154. A third heavily dopedregion 156 including a p-type dopant is in second well region 134surrounding second heavily doped region 154. Non-conductive structures160 separate third heavily doped region 156 from second heavily dopedregion 154. In some embodiments, a sinker well 170 is in substrate 110surrounding first well 132; second well 134; and third heavily dopedregion 156. Sinker well 170 includes n-type dopants. Sinker well 170 iselectrically coupled to double deep well 120.

In some embodiments, substrate 110 comprises an elementary semiconductorincluding silicon or germanium in crystal, polycrystalline, or anamorphous structure; a compound semiconductor including silicon carbide,gallium arsenic, gallium phosphide, indium phosphide, indium arsenide,and indium antimonide; an alloy semiconductor including SiGe, GaAsP,AlinAs, AlGaAs, GaInAs, GaInP, and GaInAsP; any other suitable material;or combinations thereof. In some embodiments, the alloy semiconductorsubstrate has a gradient SiGe feature in which the Si and Ge compositionchange from one ratio at one location to another ratio at anotherlocation of the gradient SiGe feature. In some embodiments, the alloySiGe is formed over a silicon substrate. In some embodiments, substrate110 is a strained SiGe substrate. In some embodiments, the semiconductorsubstrate includes a doped epi layer or a buried layer. In someembodiments, the compound semiconductor substrate has a multilayerstructure, or the substrate includes a multilayer compound semiconductorstructure.

In some embodiments, substrate 110 is a doped substrate. In someembodiments, substrate 110 is a high resistance substrate. In someembodiments, a resistance of substrate 110 is equal to or greater than1K ohm-cm. If the resistance is less than 1K ohm-cm, current leakagethrough substrate 110 at high operating voltages causes PMOS transistor100A to function improperly, in some embodiments. In some embodimentshaving the high resistance substrate, PMOS transistor 100A increasesheat dissipation in comparison with a silicon-on-insulator (SOI)substrate.

In some embodiments, upper portion 110 a and lower portion 110 b arecontinuous. In some embodiments, upper portion 110 a and lower portion110 b are discontinuous. In some embodiments, upper portion 110 a isgrown on top of lower portion 110 b. In some embodiments, upper portion110 a is grown using an epitaxial process.

Double deep well 120 is formed in substrate 110 and provides a reducedserial capacitance in comparison with PMOS transistor designs which donot include double deep well 120. An interface between double deep well120 and lower portion 110 b; and an interface between double deep well120 and upper portion 110 a form serial capacitors, so that a totalsubstrate capacitance is reduced with respect to a design which does notinclude double deep well 120.

Double deep well 120 comprises n-type dopants. In some embodiments, then-type dopants include phosphorus, arsenic or other suitable n-typedopants. In some embodiments, the n-type dopant concentration in doubledeep well 120 ranges from about 1×10¹² atoms/cm² to about 1×10¹⁴atoms/cm². In some embodiments, double deep well 120 is formed by ionimplantation. The power of the ion implantation ranges from about 1500 kelectron volts (eV) to about 8000 k eV. In some embodiments, a depth ofdouble deep well 120 ranges from about 5 microns (μm) to about 10 μm. Insome embodiments, upper portion 110 a is grown over double deep well120. In some embodiments, double deep well 120 is epitaxially grown overbottom portion 110 b.

First well 132 is in substrate 110 and has an n-type dopant type. Firstwell 132 is over upper portion 110 a. An interface between first well132 and upper portion 110 a forms a capacitor in series with thecapacitors at the interfaces of double deep well 120. In someembodiments, the n-type dopant comprises phosphorus, arsenic or anothersuitable n-type dopant. In some embodiments, a dopant species in firstwell 132 is the same as a dopant species in double deep well 120. Insome embodiments, the dopant species in first well 132 is different fromthe dopant species of double deep well 120. In some embodiments, firstwell 132 comprises an epi-layer grown over upper layer 110 a. In someembodiments, the epi-layer is doped by adding dopants during theepitaxial process. In some embodiments, the epi-layer is doped by ionimplantation after the epi-layer is formed. In some embodiments, firstwell 132 is formed by doping substrate 110. In some embodiments, thedoping is performed by ion implantation. In some embodiments, first well132 has a dopant concentration ranging from 1×10¹⁴ atoms/cm³ to 1×10¹⁶atoms/cm³. If the dopant concentration is below 1×10¹⁴ atoms/cm³, firstwell 132 does not provide sufficient conductivity to form a conductivepath below gate structure 140, in some embodiments. If the dopantconcentration is above 1×10¹⁶ atoms/cm³, first well 132 would increasethe current leakage, in some embodiments.

Second well 134 is in substrate 110 surrounding first well 132. Secondwell 134 includes a p-type dopant. In some embodiments, the p-typedopant comprises boron, aluminum or other suitable p-type dopants. Insome embodiments, second well 134 comprises an epi-layer grown upperportion 110 a. In some embodiments, the epi-layer is doped by addingdopants during the epitaxial process. In some embodiments, the epi-layeris doped by ion implantation after the epi-layer is formed. In someembodiments, second well 134 is formed by doping substrate 110. In someembodiments, the doping is performed by ion implantation. In someembodiments, second well 134 has a dopant concentration ranging from1×10¹² atoms/cm³ to 1×10¹⁴ atoms/cm³. In some embodiments, second well134 is electrically coupled to upper portion 110 a and is usable to biasthe substrate 110 at a predetermined voltage level. If the dopantconcentration is below 1×10¹² atoms/cm³, second well 134 does notprovide sufficient electrical connection with substrate 110, in someembodiments. If the dopant concentration is above 1×10¹⁴ atoms/cm³,second well 134 would increase current leakage from first well 132 tosubstrate 110, in some embodiments.

Gate structure 140 is over a top surface of first well 132. Gatestructure 140 includes a gate dielectric layer 142 over a top surface offirst well 132. A gate electrode 144 is over gate dielectric 142. Gatestructure 140 also includes spacers along sidewalls of gate dielectriclayer 142 and gate electrode 144. In some embodiments, gate dielectriclayer 142 comprises a high-k dielectric material. A high-k dielectricmaterial has a dielectric constant (k) higher than the dielectricconstant of silicon dioxide. In some embodiments, the high-k dielectricmaterial has a k value greater than 3.9. In some embodiments, the high-kdielectric material has a k value greater than 8.0. In some embodiments,gate dielectric layer 142 comprises silicon dioxide (SiO₂), siliconoxynitride (SiON), hafnium dioxide (HfO₂), zirconium dioxide (ZrO₂) orother suitable materials. In some embodiments, gate dielectric layer 142has a thickness ranging from 60 Angstroms (Å) to 80 Å. If the thicknessis less than 60 Å, gate dielectric layer 142 will break down if a highvoltage is conducted through PMOS transistor 100A, in some embodiments.If the thickness is greater than 80 Å, gate electrode layer 144 cannotefficiently activate charge transfer through a channel region of firstwell 132, in some embodiments.

Gate electrode layer 144 is disposed over gate dielectric layer 142 andis configured to receive a signal to selectively activate chargetransfer through the channel region of first well 132. In someembodiments, gate electrode layer 144 includes a conductive material,such as polycrystalline silicon (polysilicon), aluminum (Al), copper(Cu), titanium (Ti), tantalum (Ta), tungsten (W), molybdenum (Mo),platinum (Pt), tantalum nitride (TaN), titanium nitride (TiN), tungstennitride (WN), titanium aluminum (TiAl), titanium aluminum nitride(TiAlN), TaCN, TaC, TaSiN, other conductive material, or combinationsthereof. In some embodiments, the conductive material of gate electrodelayer 144 is doped or undoped depending on design requirements of fieldeffect transistor devices of an integrated circuit. In some embodiments,gate electrode layer 144 includes a work function layer tuned to have aproper work function for enhanced performance of the field effecttransistor devices. Where the field effect transistor device is a PFET,the work function layer includes a p-type work function metal (p-metal),such as TiN, TaN, other p-type work function metal, or combinationthereof. In some embodiments, a conductive layer, such as an aluminumlayer, is formed over the work function layer, such that the gateelectrode includes a work function layer disposed over a gate dielectriclayer and a conductive layer disposed over the work function layer.

First heavily doped region 152 has a p-type dopant type and is locatedat a top surface of first well 132 surrounding gate structure 140. Insome embodiments, first heavily doped region 152 is formed by etchingfirst well 132 to form a trench and growing the first heavily dopedregions in the trench. In some embodiments, dopants are introducedduring the growing of first heavily doped regions 152. In someembodiments, first heavily doped region 152 is doped followingcompletion of the growing process. In some embodiments, first heavilydoped region 152 is formed by doping first well 132. In someembodiments, first heavily doped region 152 is formed by ionimplantation into first well 132. First heavily doped region 152 has ahigher dopant concentration than first well 132. In some embodiments,first heavily doped regions 152 have a dopant concentration ranging fromabout 1×10¹⁶ atoms/cm³ to about 1×10¹⁸ atoms/cm³. If the dopantconcentration is below 1×10¹⁶ atoms/cm³, first heavily doped region 152does not provide sufficient electrical connection to first well 132, insome embodiments. If the dopant concentration is above 1×10¹⁸ atoms/cm³,gate structure 140 is unable to effective prevent conduction betweenfirst heavily doped region 152 on opposite sides of the gate structure,in some embodiments.

Second heavily doped region 154 and third heavily doped region 156 aresimilar to first heavily doped region 152, expect that second heavilydoped region 154 has an n-type dopant. In some embodiments, a dopantconcentration in first heavily doped region 152 is the same as a dopantconcentration in at least one of second heavily doped region 154 orthird heavily doped region 156. In some embodiments, the dopantconcentration in first heavily doped region 152 is different from adopant concentration in at least one of second heavily doped region 154or third heavily doped region 156.

Non-conductive regions 160 electrically separate first heavily dopedregion 152 from second heavily doped region 154. Non-conductive regions160 also electrically separate second heavily doped region 154 fromthird heavily doped region 156. In some embodiments, non-conductiveregions 160 electrically separate third heavily doped region 156 fromsinker well 170. In some embodiments, non-conductive regions 160 areisolation features, such as shallow trench isolation (STI), localoxidation of silicon (LOCOS), or other suitable isolation features. Insome embodiments, non-conductive regions 160 are undoped portions offirst well 132 or second well 134. In some embodiments, non-conductiveregions 160 are formed by etching first well 132 or second well 134 toform an opening and filling the opening with non-conductive material.

Sinker well 170 is electrically connected to double deep well 120 tobias the double deep well. In some embodiments, sinker well 170 isomitted and double deep well 120 is electrically floating. Sinker well170 comprises n-type dopants. In some embodiments, a dopant species ofsinker well 170 is a same dopant species of at least one of first well132 or second heavily doped region 154. In some embodiments, the dopantspecies of sinker well 170 is different from the dopant species of atleast one of first well 132 or second heavily doped region 154. In someembodiments, sinker well 170 is formed by ion implantation. In someembodiments, an ion implantation energy used to form sinker 170 rangesfrom about 40 k eV to about 160 k eV. In some embodiments, a dopantconcentration of sinker 170 ranges from about from 1×10¹⁵ atoms/cm³ toabout 9×10¹⁵ atoms/cm³. If the dopant concentration is below 1×10¹⁵atoms/cm³, sinker 170 does not provide sufficient electrical connectionwith double deep well 120, in some embodiments. If the dopantconcentration is above 9×10¹⁵ atoms/cm³, sinker 170 increases currentleakage in PMOS transistor 170, in some embodiments.

In some embodiments, back end of line (BEOL) structures such ascontacts, inter-layer dielectrics, interconnect structures, are formedover PMOS 100A in order to form a semiconductor device.

FIG. 1B is a cross-sectional view of an n-type metal oxide semiconductor(NMOS) transistor device 100B having a double deep well in accordancewith one or more embodiments. NMOS transistor 100B includes a substrate110 having an upper portion 110 a and a lower portion 110 b. Between theupper portion 110 a and lower portion 110 b in substrate 110 is a doubledeep well 120 having an n-type dopant concentration therein. A deep well125 is in upper portion 110 a. Deep well 125 has an n-type dopant. Afirst well 132 including a p-type dopant type is in substrate 110 aboveupper portion 110 a and deep well 125. A second well 134 is in substrate110 above upper portion 110 a surrounding first well 132. Second well134 has a p-type dopant. A third well 136 is above upper portion 110 abetween first well 132 and second well 134. Third well 136 has an n-typedopant. A gate structure 140 is formed over first well 132. A firstheavily doped region 152 is in first well 132 surrounding gate structure140. A second heavily doped region 154 is in first well 132 andsurrounds first heavily doped region 152. Non-conductive structures 160electrically separate first heavily doped region 152 from second heavilydoped region 154. A third heavily doped region 156 is in second wellregion 134 surrounding second heavily doped region 154. Non-conductivestructures 160 electrically separate third heavily doped region 156 fromsecond heavily doped region 154. A fourth heavily doped region 158 is inthird well 136 between second heavily doped region 154 and third heavilydoped region 156. Fourth heavily doped region 158 has an n-type dopant.Non-conductive regions 160 electrically separate fourth heavily dopedregion 158 from second heavily doped region 154 and from third heavilydoped region 156. In some embodiments, a sinker well 170 is in substrate110 surrounding first well 132; second well 134; and third heavily dopedregion 156. Sinker well 170 includes n-type dopants. Sinker well 170 iselectrically coupled to double deep well 120.

Substrate 110 of NMOS transistor 100B is substantially similar tosubstrate 110 of PMOS transistor 100A. Similarly, double deep well 120;second well 134; third heavily doped region 156; non-conductive regions160; and sinker 170 in NMOS transistor 100B are substantially similar tothe corresponding elements in PMOS transistor 100A. The structure andformation of first well 132; first heavily doped region 152; and secondheavily doped region 154 in NMOS transistor 100B are similar tocorresponding elements in PMOS transistor 100B, except that a dopanttype is reversed.

Deep well 125 comprises n-type dopants. In some embodiments, the n-typedopants include phosphorus, arsenic or other suitable n-type dopants. Insome embodiments, a dopant species of deep well 125 is a same dopantspecies as double deep well 120. In some embodiments, the dopant speciesof deep well 125 is different from the dopant species of double deepwell 120. In some embodiments, the n-type dopant concentration in deepwell 125 ranges from about 1×10¹³ atoms/cm² to about 3×10¹³ atoms/cm².In some embodiments, deep well 125 is formed by ion implantation. Thepower of the ion implantation ranges from about 1000 k eV to about 1500k eV. In some embodiments, a depth of deep well 125 ranges from about 4μm to about 6 μm. In some embodiments, a thickness of deep well 125ranges from about 0.5 μm to about 4 μm. In some embodiments a ratio of adepth of double deep well 120 to a depth of deep well 125 is greaterthan 1.5. A length of the of deep well 125 in a channel direction ofNMOS 100B is less than a length of double deep well 120 in the channeldirection of NMOS 100B.

Third well 136 is in substrate 110 surrounding first well 132. Thirdwell 136 includes an n-type dopant. In some embodiments, the n-typedopant comprises phosphorus, arsenic or other suitable n-type dopants.In some embodiments, a dopant species of third well 136 is a same dopantspecies as at least one of deep well 125 or double deep well 120. Insome embodiments, the dopant species of third well 136 is different fromthe dopant species of at least one of deep well 125 or double deep well120. In some embodiments, third well 136 comprises an epi-layer grown onupper portion 110 a. In some embodiments, the epi-layer is doped byadding dopants during the epitaxial process. In some embodiments, theepi-layer is doped by ion implantation after the epi-layer is formed. Insome embodiments, third well 136 is formed by doping substrate 110. Insome embodiments, the doping is performed by ion implantation. In someembodiments, third well 136 has a dopant concentration ranging from1×10¹² atoms/cm³ to 1×10¹⁴ atoms/cm³. In some embodiments, third well136 is electrically coupled to deep well 125 and is usable to bias deepwell 125 at a predetermined voltage level. If the dopant concentrationis below 1×10¹² atoms/cm³, third well 136 does not provide sufficientelectrical connection with deep well 125, in some embodiments. If thedopant concentration is above 1×10¹⁴ atoms/cm³, third well 136 wouldincrease current leakage from first well 132 to substrate 110, in someembodiments.

Gate structure 140 of NMOS transistor 100B is similar to gate structure140 of PMOS transistor 100A, except that in embodiments which include awork function material, the work function material is an n-type workfunction material. In some embodiments, the n-type work function metalcomprises Ta, TiAl, TiAlN, TaCN, other n-type work function metal, or acombination thereof.

Fourth heavily doped region 158 is similar to first heavily doped region152; expect that the fourth heavily doped region has an n-type dopant.In some embodiments, a dopant concentration in first heavily dopedregion 152 is the same as a dopant concentration in at least one ofsecond heavily doped region 154; third heavily doped region 156; orfourth heavily doped region 158. In some embodiments, the dopantconcentration in first heavily doped region 152 is different from adopant concentration in at least one of second heavily doped region 154;third heavily doped regions 156; or fourth heavily doped region 158.

In comparison with transistor structures which do not include doubledeep well 120, PMOS 100A and NMOS 100B have a several serialcapacitances which results in a reduced total substrate couplingcapacitance. In some embodiments which include sinker well 170, thesinker well is used to supply a bias voltage to double deep well 120 tofurther control the substrate capacitance. In comparison with asilicon-on-insulator construction, PMOS 100A and NMOS 100B providegreater thermal dissipation. The increased thermal dissipation decreasesreliability concerns due to heat related failure of the structure.

FIG. 2 is a flow chart of a method 200 of manufacturing a device inaccordance with one or more embodiments. Method 200 begins with forminga double deep well, e.g. double deep well 120, in a high-resistancesubstrate, e.g., substrate 110. The high resistance substrate includesnon-conductive regions, e.g., non-conductive regions 160. In someembodiments, the double deep well is formed by depositing a mask 302(FIGS. 3A-1/3A-2) over a surface of the high-resistance substrate. Themask is then patterned and developed to form an opening. The double deepwell is formed by performing ion implantation 304 (FIGS. 3A-1/3A-2)through the opening. In some embodiments, the ion implantation isperformed at an energy ranging from about 1500 k eV to about 8000 k eV.In some embodiments, a depth of the ion implantation ranges from about 5μm to about 10 μm. In some embodiments, the ion implantation continuesuntil a dopant concentration reaches a value of about 1×10¹² atoms/cm³to about 1×10¹⁴ atoms/cm³.

In some embodiments, a first anneal process is performed following theion implantation process. To prevent significant diffusion of dopants,such as boron, arsenic, phosphorus, etc., the peak anneal temperatureshould be equal to or less than about 1010° C. for rapid thermal anneal(RTA). The duration of such RTA, or rapid thermal processing (RTP)anneal, is affected by the anneal temperature. For a higher annealtemperature, the anneal time is kept lower. In some embodiments, the RTAduration is equal to or less than about 60 seconds. For example, theanneal process is performed at a temperature in a range from about 750°C. to about 850° C. for a duration in a range from about 5 seconds toabout 60 seconds, in accordance with some embodiments. If millisecondanneal (or flash anneal) is used, the peak anneal temperature is higherthan the RTA temperature and the duration is reduced. In someembodiments, the peak anneal temperature is equal to or less than about1250° C. The duration of the millisecond anneal is equal to or less thanabout 40 milliseconds, in accordance with some embodiments.

FIGS. 3A-1 and 3A-2 are cross-sectional views of a device followingoperation 202 in accordance with one or more embodiments. FIG. 3A-1 is across-sectional view of an NMOS transistor and FIG. 3A-2 is across-sectional view of a PMOS transistor. Both the NMOS transistor andthe PMOS transistor include double deep well 120 in substrate 110

Returning to FIG. 2, method 200 continues with optional operation 204 inwhich a deep well, e.g., deep well 125 is formed in the high-resistancesubstrate. In some embodiments, operation 204 is omitted when forming aPMOS transistor. In some embodiments, a shape of the deep well isdefined by depositing, developing and patterning a mask 312 (FIGS.3B-1/3B-2) over the high-resistance substrate. The length of the deepwell along a direction parallel to a top surface of the substrate isless than the length of the double deep well. The deep well is formed byion implantation 314 (FIG. 3B-1) through the mask. In some embodiments,the ion implantation is performed at an energy ranging from about 1000 keV to about 1500 k eV. In some embodiments, the ion implantationcontinues until a dopant concentration of the deep well reaches a valueof about 1×10¹² atoms/cm³ to about 3×10¹³ atoms/cm³. In someembodiments, a second anneal process is performed following the ionimplantation. In some embodiments, the second anneal process is a sameanneal process as the first anneal process. In some embodiments, thesecond anneal process is different from the first anneal process.

FIGS. 3B-1 and 3B-2 are cross-sectional views of a device followingoperation 204 in accordance with one or more embodiments. The NMOStransistor includes deep well 125 in substrate 110. No deep well isformed in the PMOS transistor, so the structure of the PMOS transistorin FIG. 3B-2 is the same as FIG. 3A-2.

Returning to FIG. 3, method 200 continues with optional operation 206 inwhich a sinker well is formed in the high-resistance substrate toelectrically connect with the double deep well. In some embodiments, thesinker well is formed by depositing, developing and patterning a mask322 (FIGS. 3C-1/3C-2) over the high-resistance substrate. In someembodiments, the sinker well is formed by performing ion implantation324 (FIGS. 3C-1/3C-2) through an opening in the mask. In someembodiments, the ion implantation process is performed at an energyranging from about 40 k eV to about 160 k eV. In some embodiments, theion implantation process continues until a dopant concentration in thesinker reaches a value of about 1×10¹⁵ atoms/cm³ to about 9×10¹⁵atoms/cm³.

FIGS. 3C-1 and 3C-2 are cross-sectional views of the device followingoperation 206 in accordance with one or more embodiments. The NMOStransistor includes sinker well 170 in substrate 110 electricallyconnected to double deep well 120. Sinker well 170 is spaced from deepwell 125. The PMOS transistor includes sinker well 170 in substrate 110electrically connected to double deep well 120.

Returning to FIG. 2, method 200 continues with operation 208 in whichp-type wells and n-type wells are formed in the high-resistancesubstrate. In some embodiments, p-type wells are formed prior to n-typewells. In some embodiments, n-type wells are formed prior to p-typewells. In some embodiments, all n-type wells are formed simultaneously.In some embodiments, at least one n-type well is formed sequentiallywith at least another n-type well. In some embodiments, all p-type wellsare formed simultaneously. In some embodiments, at least one p-type wellis formed sequentially with at least another p-type well.

In some embodiments, the p-type wells and n-type wells are formed bydepositing, developing and patterning a mask 332 (FIGS. 3D-1/3D-2) or342 (FIGS. 3E-1/3E-2) formed over the high-resistance substrate. In someembodiments, the p-type wells and n-type wells are formed by ionimplantation 334 (FIGS. 3D-1/3D-2) or 344 (FIGS. 3E-1/3E-2)through thepatterned mask. In some embodiments, the ion implantation processcontinues until a dopant concentration of the p-type well or n-type wellindependently reaches a value of from 1×10¹⁴ atoms/cm³ to 1×10¹⁶atoms/cm³.

FIGS. 3D-1 and 3D-2 are cross-sectional views of the device followingp-type wells formation in accordance with one or more embodiments. TheNMOS transistor includes first well 132 and second well 134 in substrate110 with a non-p-doped space between the first well and the second well.Second well 134 is adjacent to sinker well 170. The PMOS transistorincludes second well 134 adjacent to sinker well 170.

FIGS. 3E-1 and 3E-2 are cross-sectional views of the device followingn-type wells formation in accordance with one or more embodiments. TheNMOS transistor includes third well 136 between first well 132 andsecond well 134 in substrate 110. The PMOS transistor includes firstwell 132 surrounded second well 134.

Returning to FIG. 2, method 200 continues with operation 210 in which agate structure is formed on the high-resistance substrate. In someembodiments, the gate structure comprises a gate dielectric layer and agate electrode layer. In some embodiments, the gate structure is formedby chemical vapor deposition (CVD), physical vapor deposition (PVD),atomic layer deposition (ALD), sputtering, or other suitable depositionprocesses.

FIGS. 3F-1 and 3F-2 are cross-sectional views of the device followingoperation 210 in accordance with one or more embodiments. Both the NMOStransistor and the PMOS transistor include gate structure 140 over firstwell 132.

Returning to FIG. 2, method 200 continues with operation 212 in whichheavily doped regions are formed in the high-resistance substrate. Theheavily doped regions include both p-type heavily doped regions andn-type heavily doped regions. In some embodiments, p-type heavily dopedregions are formed prior to n-type heavily doped regions. In someembodiments, n-type heavily doped regions are formed prior to p-typeheavily doped regions. In some embodiments, all n-type heavily dopedregions are formed simultaneously. In some embodiments, at least onen-type heavily doped region is formed sequentially with at least anothern-type heavily doped region. In some embodiments, all p-type heavilydoped regions are formed simultaneously. In some embodiments, at leastone p-type heavily doped region is formed sequentially with at leastanother p-type heavily doped region.

In some embodiments, the p-type heavily doped regions and n-type heavilydoped regions are formed by depositing, developing and patterning a mask352 (FIGS. 3G-1/3G-2) or 362 (FIGS. 3H-1/3H-2) formed over thehigh-resistance substrate. In some embodiments, the p-type heavily dopedregions and n-type heavily doped regions are formed by ion implantation354 (FIGS. 3G-1/3G-2) or 364 (FIGS. 3H-1/3H-2) through the patternedmask. In some embodiments, the ion implantation process continues untila dopant concentration of the p-type heavily doped region or n-typeheavily doped region independently reaches a value of from 1×10¹⁶atoms/cm³ to 1×10¹⁸ atoms/cm³.

FIGS. 3G-1 and 3G-2 are cross-sectional views of the device followingp-type heavily doped regions formation in accordance with one or moreembodiments. The NMOS transistor includes second heavily doped region154 in first well 132; and third heavily doped region 156 in second well134. The PMOS transistor includes first heavily doped region 152 infirst well 132; and third heavily doped region 156 in second well 134.

FIGS. 3H-1 and 3H-2 are cross-sectional views of the device followingn-type heavily doped region formation in accordance with one or moreembodiments. The NMOS transistor includes first heavily doped region 152in first well 132; and fourth heavily doped region 158 in third well136. The PMOS transistor includes second heavily doped region 154 infirst well 132.

Returning to FIG. 2, method 200 continues with operation 214 in whichBEOL processes are performed. In some embodiments, BEOL processesinclude formation of an inter-layer dielectric (ILD) layer on thehigh-resistance substrate. Contact holes are formed in the ILD layer. Insome embodiments, the contact holes are formed by etching process, suchas dry etching or wet etching, or other suitable material removalprocesses. Conductive contacts are formed in the contact holes toprovide electrical connection to the heavily doped regions in thedevice. In some embodiments, the conductive contacts comprise copper,aluminum, tungsten, a conductive polymer or another suitable conductivematerial. In some embodiments, a conductive contact is formed inelectrical connection with the gate structure. In some embodiments, aconductive contact is formed in electrical contact with the sinker well.In some embodiments, additional interconnect structures are formed overILD layer to provide electrical connections between the heavily dopedregions and other circuitry. In some embodiments, the interconnectstructures provide electrical connections between the sinker well andother circuitry. In some embodiments, the interconnect structuresprovide electrical connections between the gate structure and othercircuitry.

FIGS. 31-1 and 31-2 are cross-sectional views of devices followingoperation 214 in accordance with one or more embodiments. In both theNMOS transistor and the PMOS transistor, an ILD layer 372 is oversubstrate 110. Conductive contacts 374 are formed through ILD layer 372to provide electrical connection to heavily doped regions 152-156 and tosinker well 170.

FIG. 4 is a flow chart of a method 400 of manufacturing a device inaccordance with one or more embodiments. Method 400 begins withoperation 402 in which a double deep well, e.g., double deep well 120,is formed in a lower portion of a high-resistance substrate, e.g., lowerportion 110 b. In some embodiments, the double deep well is formed bydepositing a mask 502 (FIGS. 5A-1/5A-2) over a surface of thehigh-resistance substrate. The mask is then developed and patterned toform an opening. The double deep well is formed by performing ionimplantation 504 (FIGS. 5A-1/5A-2) through the opening. In someembodiments, the ion implantation is performed at an energy ranging fromabout 800 k eV to about 1000 k eV. In some embodiments, the ionimplantation continues until a dopant concentration reaches a value ofabout 1×10¹² atoms/cm³ to about 1×10¹⁴ atoms/cm³. In comparison withoperation 202, operation 402 has a lower ion implantation energy due toa decreased thickness of the high-resistance substrate into which thedouble deep well is implanted.

FIGS. 5A-1 and 5A-2 are cross-sectional views of a device followingoperation 402 in accordance with one or more embodiments. FIG. 5A-1 is across-sectional view of an NMOS transistor and FIG. 5A-2 is across-sectional view of a PMOS transistor. The NMOS transistor and thePMOS transistor include double deep well 120 in substrate 110

Returning to FIG. 4, method 400 continues with operation 404 in which anupper portion of a high-resistance substrate is grown over the lowerportion of the high-resistance substrate. The lower portion of thehigh-resistance substrate includes the double deep well. In someembodiments, the upper portion is grown over the lower portion using anepitaxial growth process. The upper portion of the high-resistancesubstrate is grown over the lower portion of the substrate until thedouble deep well has a depth of about 5 μm to about 10 μm below a topsurface of the upper portion of the high-resistance substrate.

FIGS. 5B-1 and 5B-2 are cross-sectional views of a device followingoperation 404 in accordance with one or more embodiments. The NMOStransistor and the PMOS transistor include upper portion 110 a of thehigh-resistance substrate grown over lower portion 110 b of thehigh-resistance substrate which already includes double deep well 120.

Returning to FIG. 4, method 400 continues with operation 406 in whichnon-conductive regions are formed in the upper portion of thehigh-resistance substrate. In some embodiments, the non-conductiveregions are formed by etching the upper portion of the high-resistancesubstrate to form cavities and filling the cavities with non-conductivematerials. In some embodiments, the non-conductive regions are formed bya local oxidation of the upper portion of the high-resistance substrate.

Method 400 continues with optional operation 408 in which a deep well isformed in the upper portion of the high-resistance substrate. In someembodiments, operation 408 is omitted when forming a PMOS transistor.Optional operation 408 is similar to optional operation 204 of method200.

FIGS. 5C-1 and 5C-2 are cross-sectional views of a device followingoperation 408 in accordance with one or more embodiments. The NMOStransistor includes deep well 125 in the NMOS transistor. No deep wellis formed in the PMOS transistor, so the structure of the PMOStransistor in FIG. 5C-2 does not include a deep well. Non-conductiveregions 160 are formed in both the PMOS transistor structure and theNMOS transistor structure.

Returning to FIG. 4, method 400 continues with optional operation 410 inwhich a sinker is formed in the high-resistance substrate. In operation412, p-type wells and n-type wells are formed in the high-resistancesubstrate. Method 400 continues with operation 414 in which a gatestructure is formed over the high-resistance substrate. In operation416, p-type and n-type heavily doped regions are formed in thehigh-resistance substrate. BEOL processes are performed in operation418. Operations 410-418 are substantially similar to operations 206-214of method 200. The details of which are not repeated here for the sakeof brevity.

In comparison a silicon-on-insulator structure, the process operation ofmethods 200 and 400 are capable of being integrated into a productionprocess for a complementary metal oxide semiconductor (CMOS). Theability to integrate the production operation into a CMOS productionprocess decreases production costs in comparison with other approacheswhich require specialized steps.

One aspect of this description relates to a method of forming asemiconductor device. The method includes patterning a first mask over asubstrate, wherein the patterned first mask has a first opening, and thesubstrate include a first dopant type. The method further includesimplanting ions having a second dopant type through the first openinginto the substrate to form a first deep well. The method furtherincludes patterning a second mask over the substrate, wherein thepatterned second mask has a second opening. The method further includesimplanting ions having the second dopant type through the second openinginto the substrate to form a second deep well, wherein an energy forimplanting ions to form the second deep well is lower than an energy forimplanting ions to form the first deep well. The method further includesimplanting ions having the first dopant type into the substrate to forma first well, wherein the energy for implanting ions to form the seconddeep well is greater than an energy for implanting ions to form thefirst well. The method further includes forming a gate structure overthe first well.

Another aspect of this description relates to a method of forming asemiconductor device. The method includes implanting ions having asecond dopant type into a substrate to form a deep well, wherein thesubstrate has a first dopant type. The method further includes growingan upper portion over the substrate, wherein the upper portion is overthe deep well. The method further includes implanting ions having thefirst dopant type in the upper portion to form a first well. The methodfurther includes implanting ions having the second dopant type in theupper portion to form a second well, wherein the second well is incontact with the first well. The method further includes forming a gatestructure over the first well.

Still another aspect of this description relates to a method of forminga semiconductor device. The method includes implanting ions having asecond dopant type in a substrate to form a first deep well, wherein thesubstrate has a first dopant type. The method further includesimplanting ions having the second dopant type in the substrate to form asecond deep well, wherein an energy for implanting ions to form thesecond deep well is less than an energy for implanting ions to form thefirst deep well. The method further includes implanting ions having thefirst dopant type in the substrate to form a first well, wherein adopant concentration in the first well is greater than or equal to adopant concentration in the first deep well. The method further includesforming a gate structure over the first well.

It will be readily seen by one of ordinary skill in the art that one ormore of the disclosed embodiments fulfill one or more of the advantagesset forth above. After reading the foregoing specification, one ofordinary skill will be able to affect various changes, substitutions ofequivalents and various other embodiments as broadly disclosed herein.It is therefore intended that the protection granted hereon be limitedonly by the definition contained in the appended claims and equivalentsthereof.

What is claimed is:
 1. A method of forming a semiconductor device, themethod comprising: patterning a first mask over a substrate, wherein thepatterned first mask has a first opening, and the substrate include afirst dopant type; implanting ions having a second dopant type throughthe first opening into the substrate to form a first deep well;patterning a second mask over the substrate, wherein the patternedsecond mask has a second opening; implanting ions having the seconddopant type through the second opening into the substrate to form asecond deep well, wherein an energy for implanting ions to form thesecond deep well is lower than an energy for implanting ions to form thefirst deep well; implanting ions having the first dopant type into thesubstrate to form a first well, wherein the energy for implanting ionsto form the second deep well is greater than an energy for implantingions to form the first well; and forming a gate structure over the firstwell.
 2. The method of claim 1, wherein the energy for implanting ionsto form the first deep well ranges from about 1500 k electron volts (eV)to about 8000 k eV.
 3. The method of claim 1, wherein the energy forimplanting ions to form the second deep well ranges from about 1000 k eVto about 1500 k eV.
 4. The method of claim 1, further comprising:implanting ions having the second dopant type into the substrate to forma sinker well, wherein the sinker well is over and in contact with thefirst deep well.
 5. The method of claim 1, wherein the energy forimplanting ions to form the first deep well comprises forming the firstdeep well at a first depth, the energy for implanting ions to form thesecond deep well comprises forming the second deep well at a seconddepth, and a ratio of the first depth to the second depth is greaterthan 1.5.
 6. A method of forming a semiconductor device, the methodcomprising: implanting ions having a second dopant type into a substrateto form a deep well, wherein the substrate has a first dopant type;growing an upper portion over the substrate, wherein the upper portionis over the deep well; implanting ions having the first dopant type inthe upper portion to form a first well; implanting ions having thesecond dopant type in the upper portion to form a second well, whereinthe second well is in contact with the first well; and forming a gatestructure over the first well.
 7. The method of claim 6, furthercomprising implanting ions in the upper portion and the substrate toform a sinker well, wherein the sinker well contacts the deep well. 8.The method of claim 7, wherein implanting ions to form the sinker wellcomprises implanting ions in a region of the upper portion surroundingthe second well.
 9. The method of claim 6, further comprising implantingions having the second dopant type in the first well to form a firstheavily doped region, wherein an energy for implanting ions for formingthe first heavily doped region is less than an energy for implantingions for forming the first well.
 10. The method of claim 9, furthercomprising implanting ions having the first dopant type in the firstwell to form a second heavily doped region, wherein an energy forimplanting ions for forming the second heavily doped region is less thanthe energy for implanting ions for forming the first well, and thesecond heavily doped region is between the first heavily doped regionand the second well.
 11. The method of claim 9, further comprisingimplanting ions having the second dopant type in the second well to forma third heavily doped region, wherein an energy for implanting ions forforming the third heavily doped region is less than an energy forimplanting ions for forming the second well.
 12. The method of claim 11,wherein implanting ions to form the third heavily doped region isperformed simultaneously with implanting ions to form the first heavilydoped region.
 13. The method of claim 6, further comprising implantingions having the second dopant type in the upper portion to form a seconddeep well, wherein an energy for implanting ions for forming the seconddeep well is greater than an energy for implanting ions for forming thefirst well.
 14. The method of claim 13, wherein implanting ions to formthe second deep well comprises implanting ions to form the second deepwell having a width greater than a width of the first well.
 15. Themethod of claim 6, wherein growing the upper portion comprisesepitaxially growing the upper portion to have a top surface spaced froma top surface of the deep well by a distance ranging from about 5 μm toabout 10 μm.
 16. A method of forming a semiconductor device, the methodcomprising: implanting ions having a second dopant type in a substrateto form a first deep well, wherein the substrate has a first dopanttype; implanting ions having the second dopant type in the substrate toform a second deep well, wherein an energy for implanting ions to formthe second deep well is less than an energy for implanting ions to formthe first deep well; implanting ions having the first dopant type in thesubstrate to form a first well, wherein a dopant concentration in thefirst well is greater than or equal to a dopant concentration in thefirst deep well; and forming a gate structure over the first well. 17.The method of claim 16, wherein implanting ions to form the first wellcomprises implanting ions to form the first well having an interfacewith the second deep well.
 18. The method of claim 16, furthercomprising implanting ions in the substrate to form a sinker well,wherein the sinker well is connected to the first deep well, and thesinker well surrounds the second deep well.
 19. The method of claim 16,further comprising implanting ions having the second dopant type in thesubstrate to for a second well surrounding the first well, wherein afirst portion of the first well contacts a first portion of the secondwell.
 20. The method of claim 19, further comprising forming anon-conductive structure in the substrate, wherein a second portion ofthe second well is separated from a second portion of the first well bythe non-conductive structure.